半导体物理性能手册-第2卷-(上册)

本书特色

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　　《springer手册精选原版系列：半导体物理性能手册（第2卷 上册）》介绍了各族半导体、化合物半导体的物理性能，包括：结构特性、热学性质、弹性性质、声子与晶格振动性质、集体效应及相关性质、能带结构：能带隙、能带结构：电子和空穴的有效质量、电子形变势、电子亲和能与肖特基势垒高度、光学性质、弹光、电光和非线性光学性质、载流子输运性质。

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目录

prefaceacknowledgmentscontents of other volumes1 cubic boron nitride (c-bn)1.1 structural properties1.1.1 ionicity1.1.2 elemental isotopic abundance and molecular weight1.1.3 crystal structure and space group1.1.4 lattice constant and its related parameters1.1.5 structural phase transition1.1.6 cleavage plane1.2 thermal properties1.2.1 melting point and its related parameters1.2.2 specific heat1.2.3 debye temperature1.2.4 thermal expansion coefficient1.2.5 thermal conductivity and diffusivity1.3 elastic properties1.3.1 elastic constant1.3.2 third-order elastic constant1.3.3 young’s modulus, poisson’s ratio, and similar1.3.4 microhardness1.3.5 sound velocity1.4 phonons and lattice vibronic properties1.4.1 phonon dispersion relation1.4.2 phonon frequency1.4.3 mode gruneisen parameter1.4.4 phonon deformation potential1.5 collective effects and related properties1.5.1 piezoelectric constant1.5.2 frohlich coupling constant1.6 energy-band structure: energy-band gaps1.6.1 basic properties1.6.2 eo-gap region1.6.3 higher-lying direct gap1.6.4 lowest indirect gap1.6.5 conduction-valley energy separation1.6.6 direct-indirect-gap transition pressure1.7 energy-band structure: electron and hole effective masses l1.7.1 electron effective mass: f valley1.7.2 electron effective mass: satellite valley1.7.3 hole effective mass1.8 ‘electronic deformation potential1.8.1 intravalley deformation potential: i- point1.8.2 intravalley deformation potential: high-symmetry points1.8.3 intervalley deformation potential1.9 electron affinity and schottky barrier height1.9.1 electron affinity1.9.2 schottky barrier height1.10 optical properties1.10.1 summary of optical dispersion relations1.10.2 the reststrahlen region1.10.3 at or near the fundamental absorption edge1.10.4 the interband transition region1.10.5 free-carrier absorption and related phenomena1.11 elastooptic, electrooptic, and nonlinear optical properties1.11.1 elastooptic effect1.11.2 linear electrooptic constant1.11.3 quadratic electrooptic constant1.11.4 franz-keldysh effect1.11.5 nonlinear optical constant1.12 carrier transport properties1.12.1 low-field mobility: electrons1.12.2 low-field mobility: holes1.12.3 high-field transport: electrons1.12.4 high-field transport: holes1.12.5 minority-carrier transport: electrons in p-type materials1.12.6 minority-carrier transport: holes in n-type materials……2 hexagonal boron nitride (h-bn)3 boron phosphide (bp)4 boron arsenide (bas)5 wurtzite aluminum nitride (w-ain)6 cubic aluminum nitride (c-ain)8 aluminum arsenide (aias)9 aluminum antimonide (aisb)

封面

书名:半导体物理性能手册-第2卷-(上册)

作者:足立贞夫

页数:232

定价:¥148.0

出版社:哈尔滨工业大学出版社

出版日期:2014-04-01

ISBN:9787560345161

PDF电子书大小:34MB 高清扫描完整版